Synthesis of c-tilted AlN films with a good tilt and thickness uniformity
2011 (English)In: Proceedings of IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM, New York, USA, 2011, 1238-1241 p.Conference paper (Refereed)
This communication describes a method for the deposition of thin piezoelectric AlN films with an inclined c-axis relative to the surface normal. Further, the tilt over the wafer is sufficiently uniform and exhibits a planar symmetry as well as good thickness uniformity. Careful control of both the nucleation and growth stages is needed to obtain tilted films with excellent quality. Thus in the nucleation state, it is argued that two independent mechanisms, namely seed layer texture and/or surface roughness, are mainly responsible for the subsequent titled growth. To achieve the latter, however, a certain directionality of the deposition flux is also necessary. The directionality of the deposition flux is achieved through the use of an array of linear magnetrons tilted under a certain angle with respect to the substrate normal.
Place, publisher, year, edition, pages
New York, USA, 2011. 1238-1241 p.
AlN, c-axis tilt, piezoelectric, shear waves
Other Materials Engineering
IdentifiersURN: urn:nbn:se:uu:diva-189952ISI: 000309918400287ISBN: 978-1-4577-1252-4OAI: oai:DiVA.org:uu-189952DiVA: diva2:582591
IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM (IUS), 18-21 October, 2011, Orlando, FL, USA