uu.seUppsala University Publications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
High rate reactive magnetron sputtering of oxides using sputtering yield amplification
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Thin Films Group)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Thin Films Group)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Thin Films Group)
2012 (English)Conference paper, Oral presentation only (Refereed)
Abstract [en]

In this contribution, we summarize our work on increasing the deposition rate in reactive magnetron sputtering by sputtering yield amplification. Modelling of the sputtering process predicts that a very high deposition rate increase by more than 100 % may be achieved for oxides. Comparable values were measured experimentally using a setup suitable for up-scaling.

In sputtering yield amplification the target is doped with a heavy dopant in order to reflect the recoils created in a collision cascade towards the surface and thus increase the number of atoms sputtered from the surface. In order to realize the process, an experimental system for serial co-sputtering has been built and used for experimental studies. The dopants are introduced from an auxiliary cathode onto the primary rotating target and incorporated into the target surface by recoil implantation during sputtering. A necessary requirement for suitable doping elements is high atomic mass. Another important parameter is the surface binding energy as demonstrated by comparison of W and Bi, two heavy elements with very different surface binding energies. Using a dynamical model of the sputtering process, the performance of various doping elements is evaluated.

Reactive sputtering of Al and Ti targets with W and Bi doping was performed.  The deposition rate of Al2O3 can be increased by 80 % by W doping of the Al target in very good agreement with predictions. For TiO2, however, an increase by more than 100 % was observed, substantially higher than predicted. Finally, the optical properties of W doped Al2O3 and TiO2 thin films are briefly discussed.

Place, publisher, year, edition, pages
2012.
National Category
Engineering and Technology
Research subject
Engineering Science with specialization in Electronics
Identifiers
URN: urn:nbn:se:uu:diva-190005OAI: oai:DiVA.org:uu-190005DiVA: diva2:582754
Conference
13th International Conference on Plasma Surface Engineering PSE, September 2012, Garmisch-Partenkirchen, Germany
Available from: 2013-01-07 Created: 2013-01-07 Last updated: 2013-04-08

Open Access in DiVA

No full text

Authority records BETA

Kubart, TomasNyberg, TomasBerg, Sören

Search in DiVA

By author/editor
Kubart, TomasNyberg, TomasBerg, Sören
By organisation
Solid State Electronics
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 861 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf