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Modelling of reactive magnetron sputtering: Towards comprehensive model
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Thin Films Group)
2012 (English)Conference paper, Presentation (Refereed)
Abstract [en]

Modelling of reactive sputtering is a very useful tool to reduce the need for trial-and-error based process optimization as well as to support process development. It also provides a test platform for our understanding of the process. Although the classical "Berg's model" describes the basic behaviour of reactive sputtering remarkably well, there is still a number of open questions regarding the underlying physical processes.

In this contribution, we first summarize the latest development in the modelling, such as extensions of the basic model taking into account the ion current distribution, various mechanisms of the reactive gas incorporation or process dynamics. Then we briefly describe some of the intriguing experimental results from reactive High Power Impulse Magnetron Sputtering (HiPIMS).

In order to develop a comprehensive model applicable to reactive HiPIMS, more accurate description of the individual effects taking place in sputtering is essential. A first step in the development of such a model is outlined with focus on the surface processes.

Place, publisher, year, edition, pages
National Category
Manufacturing, Surface and Joining Technology
Research subject
Engineering Science with specialization in Electronics
URN: urn:nbn:se:uu:diva-189250OAI: oai:DiVA.org:uu-189250DiVA: diva2:582824
Invited talk, 11th International Conference on Reactive Sputter Deposition 2012
Available from: 2013-01-07 Created: 2012-12-28 Last updated: 2013-04-08

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Kubart, Tomas
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