Synthesis and characterization of highly c-textured Al(1-x)Sc(x)N thin films in view of telecom applications
2012 (English)In: More than moore: Novel materials approaches for functionalized silicon based microelectronics, 2012, 012014- p.Conference paper (Refereed)
Wurtzite AlN is a piezoelectric material with excellent electro-acoustic properties and is used for the fabrication of high frequency thin film micro-acoustic components, most notably filters, duplexers, resonators, etc. Its moderate electromechanical coupling coefficient (k(t)(2)) of 6%-7% is insufficient for applications requiring larger bandwidths. Recent theoretical and experimental studies indicate that AlN alloyed with Sc exhibits a substantially higher piezoelectric constant than pure AlN. This study aims at determining the main electro-acoustic parameters of Al(1-x)Sc-(x) N in view of large bandwidth applications. To this end, highly c-textured Al(1-x)Sc(x) N thin films have been synthesized with relative Sc concentrations of up to 0,15. Subsequently, FBAR resonators were fabricated and characterized as a function of the Sc content. It is seen that k(t)(2) increases linearly with the latter to a value of 12% for a Sc concentration of x=0,15, while the Q value decreases from 739 to about 348 in the same concentration range. Likewise, the TCF varies from -35,9ppm/degrees C to -39,8ppm/degrees C, while the dielectric constant increases from epsilon=10 to a value of 14,1 for x=0,15. Finally, the relative dielectric losses are seen to increase by approximately a factor of two.
Place, publisher, year, edition, pages
2012. 012014- p.
, IOP Conference Series-Materials Science and Engineering, ISSN 1757-8981 ; 41
Natural Sciences Engineering and Technology
Research subject Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-192687DOI: 10.1088/1757-899X/41/1/012014ISI: 000312412000014OAI: oai:DiVA.org:uu-192687DiVA: diva2:600699
Symposium M on More than Moore - Novel Materials Approaches for Functionalized Silicon Based Microelectronics at Spring Meeting of the European-Materials-Research-Society (E-MRS); 14-18 May 2012; Strasbourg, FRANCE