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Synthesis and characterization of highly c-textured Al(1-x)Sc(x)N thin films in view of telecom applications
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
2012 (English)In: More than moore: Novel materials approaches for functionalized silicon based microelectronics, 2012, 012014- p.Conference paper, Published paper (Refereed)
Abstract [en]

Wurtzite AlN is a piezoelectric material with excellent electro-acoustic properties and is used for the fabrication of high frequency thin film micro-acoustic components, most notably filters, duplexers, resonators, etc. Its moderate electromechanical coupling coefficient (k(t)(2)) of 6%-7% is insufficient for applications requiring larger bandwidths. Recent theoretical and experimental studies indicate that AlN alloyed with Sc exhibits a substantially higher piezoelectric constant than pure AlN. This study aims at determining the main electro-acoustic parameters of Al(1-x)Sc-(x) N in view of large bandwidth applications. To this end, highly c-textured Al(1-x)Sc(x) N thin films have been synthesized with relative Sc concentrations of up to 0,15. Subsequently, FBAR resonators were fabricated and characterized as a function of the Sc content. It is seen that k(t)(2) increases linearly with the latter to a value of 12% for a Sc concentration of x=0,15, while the Q value decreases from 739 to about 348 in the same concentration range. Likewise, the TCF varies from -35,9ppm/degrees C to -39,8ppm/degrees C, while the dielectric constant increases from epsilon=10 to a value of 14,1 for x=0,15. Finally, the relative dielectric losses are seen to increase by approximately a factor of two.

Place, publisher, year, edition, pages
2012. 012014- p.
Series
IOP Conference Series-Materials Science and Engineering, ISSN 1757-8981 ; 41
National Category
Natural Sciences Engineering and Technology
Research subject
Engineering Science with specialization in Electronics
Identifiers
URN: urn:nbn:se:uu:diva-192687DOI: 10.1088/1757-899X/41/1/012014ISI: 000312412000014OAI: oai:DiVA.org:uu-192687DiVA: diva2:600699
Conference
Symposium M on More than Moore - Novel Materials Approaches for Functionalized Silicon Based Microelectronics at Spring Meeting of the European-Materials-Research-Society (E-MRS); 14-18 May 2012; Strasbourg, FRANCE
Available from: 2013-01-25 Created: 2013-01-24 Last updated: 2013-03-04Bibliographically approved

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Moreira, Milena De AlbuquerqueBjurström, JohanYantchev, VentsislavKatardjiev, Ilia

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