Hole doping of graphene supported on Ir(111) by AlBr3
2013 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 102, no 6, 061601- p.Article in journal (Refereed) Published
In this Letter we report an easy and tenable way to tune the type of charge carriers in graphene, using a buried layer of AlBr3 and its derivatives on the graphene/Ir(111) interface. Upon the deposition of AlBr3 on graphene/Ir(111) and subsequent temperature-assisted intercalation of graphene/Ir(111) with atomic Br and AlBr3, pronounced hole doping of graphene is observed. The evolution of the graphene/Br-AlBr3/Ir(111) system at different stages of intercalation has been investigated by means of microbeam low-energy electron microscopy/electron diffraction, core-level photoelectron spectroscopy and angle-resolved photoelectron spectroscopy.
Place, publisher, year, edition, pages
American Chemical Society (ACS), 2013. Vol. 102, no 6, 061601- p.
graphene, hole doping, adsorption, intercalation, charge carriers
Condensed Matter Physics
Research subject Physics with spec. in Atomic, Molecular and Condensed Matter Physics
IdentifiersURN: urn:nbn:se:uu:diva-194084DOI: 10.1063/1.4790579ISI: 000315053300016OAI: oai:DiVA.org:uu-194084DiVA: diva2:604198