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Long-term Stability and Electrical Properties of Compensation Doped Poly-Si IC-Resistors
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. Fasta tillståndets elektronik.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. Materialvetenskap.
2000 (English)In: IEEE Transaction on Electron Devices, Vol. 47, no 2, 417-426 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
2000. Vol. 47, no 2, 417-426 p.
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URN: urn:nbn:se:uu:diva-32778OAI: oai:DiVA.org:uu-32778DiVA: diva2:60676
Available from: 2007-02-28 Created: 2007-02-28 Last updated: 2011-01-14

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Smith, Ulf

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