Na doping of CIGS solar cells using low sodium-doped mo layer
2013 (English)In: IEEE Journal of Photovoltaics, ISSN 2156-3381, Vol. 3, no 1, 509-513 p.Article in journal (Refereed) Published
Na plays an important role in the electrical performance of Cu(In,Ga)Se2 (CIGS) thin-film solar cells. Traditionally, Na has been introduced during the growth of CIGS by thermal diffusion from the soda-lime glass (SLG) substrate; however, better control of the amount of Na is needed to have a more precise control of growth conditions. The introduction of Na into CIGS was studied in three different ways: from the SLG, from a NaF precursor, and from a Na-doped Mo (MoNa) back contact. The most successful approaches were obtained by using the conventional SLG and the NaF precursor. Different growth temperatures of CIGS were tested in an attempt to diffuse more Na from the MoNa layer.
Place, publisher, year, edition, pages
2013. Vol. 3, no 1, 509-513 p.
Photovoltaic cells, solar energy, thin films, Back contact, CIGS solar cells, Cu(In, Ga)Se, Electrical performance, Growth conditions, Na doped, Na doping, Precise control, Soda lime glass substrate, Thin-film solar cells, Copper, Semiconducting selenium compounds, Solar cells, Sodium
Engineering and Technology
Research subject Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-195030DOI: 10.1109/JPHOTOV.2012.2226144ISI: 000318434000080OAI: oai:DiVA.org:uu-195030DiVA: diva2:606885
Art. No.: 63614222013-02-212013-02-202014-01-09Bibliographically approved