Correlation between interfacial electronic structure and mechanical properties of ZrN/SiNx films
2013 (English)In: Materials letters (General ed.), ISSN 0167-577X, E-ISSN 1873-4979, Vol. 94, 61-64 p.Article in journal (Refereed) Published
The ZrN/SiNx double-layers with different density of SiNx layers, which was controlled by applying different substrate bias for depositing SiNx layers, were synthesized for investigating the interfacial electronic structure. Results indicated that the interfacial electrostatic polarization existed as the ZrN and SiNx bond with each other to form a heterojunction, since the electrons donated from ZrN layer to SiNx layer. Moreover, the degree of polarization was affected by the density of SiNx layer. The corresponding ZrN/SiNx multi-layers were deposited for studying the correlation between interfacial electronic structure and mechanical properties. The results of hardness test implied that the interfacial electrostatic polarization would enhance the hardness to a certain extent.
Place, publisher, year, edition, pages
2013. Vol. 94, 61-64 p.
Electrostatic polarization, Indentation and hardness, Interface, Thin films, Degree of polarization, Different substrates, Hardness test, Interfacial electronic structure, Deposits, Electrostatics, Hardness, Heterojunctions, Interfaces (materials), Polarization, Electronic structure
IdentifiersURN: urn:nbn:se:uu:diva-194993DOI: 10.1016/j.matlet.2012.12.011ISI: 000315254400017OAI: oai:DiVA.org:uu-194993DiVA: diva2:606917