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Transport behavior of holes in boron delta-doped diamond structures
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electricity.
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2013 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 113, no 3, 033702- p.Article in journal (Refereed) Published
Abstract [en]

Boron delta-doped diamond structures have been synthesized using microwave plasma chemical vapor deposition and fabricated into FET and gated Hall bar devices for assessment of the electrical characteristics. A detailed study of variable temperature Hall, conductivity, and field-effect mobility measurements was completed. This was supported by Schrodinger-Poisson and relaxation time calculations based upon application of Fermi's golden rule. A two carrier-type model was developed with an activation energy of similar to 0.2 eV between the delta layer lowest subband with mobility similar to 1 cm(2)/Vs and the bulk valence band with high mobility. This new understanding of the transport of holes in such boron delta-doped structures has shown that although Hall mobility as high as 900 cm(2)/Vs was measured at room temperature, this dramatically overstates the actual useful performance of the device.

Place, publisher, year, edition, pages
2013. Vol. 113, no 3, 033702- p.
National Category
Natural Sciences Engineering and Technology
Research subject
Engineering Science with specialization in Science of Electricity
URN: urn:nbn:se:uu:diva-195376DOI: 10.1063/1.4775814ISI: 000313670600031OAI: oai:DiVA.org:uu-195376DiVA: diva2:607775
Available from: 2013-02-25 Created: 2013-02-25 Last updated: 2014-01-10Bibliographically approved

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