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Solution-Processed Logic Gates Based On Nanotube/Polymer Composite
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Emerging Electronics)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Emerging Electronics)
Department of microelectronics, Fudan University.
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2013 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, Vol. 60, no 8, 2542-2547 p.Article in journal (Refereed) Published
Abstract [en]

Hysteresis-free logic gates capable of operation at 100 kHz are fabricated basing on local-gate thin-film transistors with their channel featuring solution-processed composite films of single-walled carbon nanotubes (SWCNTs) and poly(9,9-dioctylfluorene-co-bithiophene) (F8T2). Using dip-coating for deposition of composite films, high-density SWCNTs are found to be embedded in an F8T2 layer and thus being kept from the underlying AlOx gate dielectric by a certain distance. The presence of the F8T2 interlayer effectively suppresses hysteresis although it also weakens the gate electrostatic control. The fabricated transistors are characterized by nil hysteresis, high carrier mobility, large ON/OFF current ratio, low operation voltage, small subthreshold swing, and remarkable scalability. These properties are crucial for the realization of the well-performing logic circuits.

Place, publisher, year, edition, pages
2013. Vol. 60, no 8, 2542-2547 p.
National Category
Engineering and Technology
Research subject
Engineering Science with specialization in Electronics
URN: urn:nbn:se:uu:diva-198276DOI: 10.1109/TED.2013.2264969ISI: 000322124100017OAI: oai:DiVA.org:uu-198276DiVA: diva2:615622
Available from: 2013-04-11 Created: 2013-04-11 Last updated: 2014-02-18Bibliographically approved
In thesis
1. Towards Solution Processed Electronic Circuits Using Carbon Nanotubes
Open this publication in new window or tab >>Towards Solution Processed Electronic Circuits Using Carbon Nanotubes
2013 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Emerging macro- and flexible electronic applications such as foldable displays, artificial skins, and smart textiles grow rapidly into the market. Solution-processed thin-film transistors (TFTs) based on single-walled carbon nanotubes (SWCNTs) as the semiconductor channel can offer high performance, low cost and versatility for macro- and flexible electronics. Major challenges to the development of SWCNT-based TFTs include: (i) hysteresis in their transfer characteristics (TCs), (ii) difficulties in simultaneous achievements of high on-state current Ion and large on/off current ratio Ion/Ioff, and (iii) poor uniformity and scalability resulting from the poor solution processability. This thesis aims at developing reliable and simple process techniques for fabrication of the SWCNT-based TFTs that possess the afore-stated characteristics. It presents a systematic investigation to not only explore the fundamental device physics, but also develop novel fabrication methods for enhancement of device performance.

First, issues related to the measurement of gate capacitance (Cg), the determination of current scalability, and the hysteresis in randomly networked SWCNTs are properly addressed. This leads to the establishment of a comprehensive methodology for extraction of carrier mobility (μ) for the SWCNT-based TFTs. In detail, the large hysteresis is effectively suppressed by adopting a pulsed drain current-gate voltage (Id-Vg) method in which the polarity of the gate pulse was alternating during the measurement. Different from most reported methods in the literature, Cg is accurately determined in our case by performing direct capacitance-voltage measurement on the TFTs.

Second, with the employment of functional composites comprising SWCNTs embedded in a semiconducting polymer, poly-9,9 dioctyl-fluorene-cobithiophene (F8T2), as the semiconducting channel via facile solution processes under ambient conditions, the fabricated TFTs exhibit outstanding electrical performance with: (i) negligible hysteresis, (ii) high μ, (iii) high Ion and large Ion/Ioff, (iv) excellent uniformity and dimensional scalability, and (v) good stability. These highly desired performance parameters are achieved owing to an ideal composite structure with metallic SWCNTs being selectively removed and the remaining semiconducting SWCNTs being well wrapped by the polymer matrix.

Finally, the developed TFTs basing on the SWCNT/F8T2 composite are used as the building block to construct some logic circuits. The resultant inverters, NANDs, and NORs are found to retain the small-hysteresis characteristics, with a cut-off frequency reaching 100 kHz. The results presented in this thesis advance the state-of-art SWCNT-based macroelectronics.

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2013. 62 p.
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 1039
National Category
Engineering and Technology
urn:nbn:se:uu:diva-198280 (URN)978-91-554-8657-0 (ISBN)
Public defence
2013-05-30, Häggsalen, Ångström Laboratory, Lägerhyddsvägen 1, Uppsala, 13:15 (English)
Available from: 2013-05-08 Created: 2013-04-11 Last updated: 2013-08-30

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Liu, ZhiyingGao, XingdongZhang, ZhibinZhang, Shi-Li
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