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Ultra-shallow junctions formed using microwave annealing
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2013 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 102, no 12, 122114- p.Article in journal (Refereed) Published
Abstract [en]

Microwave annealing is shown to be viable for achieving low thermal budget formation of ultra-shallow junctions. Regrowth of a 10 nm thick amorphous Si layer that is generated during a Ge amorphization process prior to BF2 or As dopant implantation proceeds at rates up to 0.53 nm/min for BF2 and up to 0.33 nm/min for As at 370 degrees C. The fraction of electrical activation for implanted dopants is as high as 13% for BF2 and 32% for As with negligible diffusion at 540 degrees C.

Place, publisher, year, edition, pages
2013. Vol. 102, no 12, 122114- p.
National Category
Natural Sciences Engineering and Technology
Research subject
Engineering Science with specialization in Electronics
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URN: urn:nbn:se:uu:diva-199727DOI: 10.1063/1.4799030ISI: 000316967100046OAI: oai:DiVA.org:uu-199727DiVA: diva2:621045
Available from: 2013-05-13 Created: 2013-05-13 Last updated: 2017-12-06Bibliographically approved

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Zhang, Zhi-BinZhang, Shi-Li

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