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Hole transport in single crystal synthetic diamond at low temperatures
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electricity.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electricity.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electricity.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electricity.
2013 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 102, no 15, 152113- p.Article in journal (Refereed) Published
Abstract [en]

Investigating the effects of local scattering mechanisms is of great importance to understand charge transport in semiconductors. This article reports measurements of the hole transport properties of boron-doped (100) single-crystalline chemical vapor deposited diamond. A Time-of-Flight measurement using a 213 nm, pulsed UV laser for excitation, was performed on high-purity single-crystalline diamonds to measure the hole drift velocity in the low-injection regime. The measurements were carried out in the temperature range 10-80 K. The results obtained are directly applicable to low-temperature detector applications. By comparing our data to Monte-Carlo simulations, a detailed understanding of the dominating hole scattering mechanisms is obtained.

Place, publisher, year, edition, pages
2013. Vol. 102, no 15, 152113- p.
National Category
Engineering and Technology
Research subject
Engineering Science with specialization in Science of Electricity
Identifiers
URN: urn:nbn:se:uu:diva-201821DOI: 10.1063/1.4802449ISI: 000318269200044OAI: oai:DiVA.org:uu-201821DiVA: diva2:629349
Available from: 2013-06-17 Created: 2013-06-17 Last updated: 2017-12-06Bibliographically approved

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Majdi, SamanKovi, Kiran KumarHammersberg, JohanIsberg, Jan

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