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Anisotropic electrical resistivity during annealing of oriented columnar titanium films
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
2013 (English)In: Materials letters (General ed.), ISSN 0167-577X, E-ISSN 1873-4979, Vol. 105, 20-23 p.Article in journal (Refereed) Published
Abstract [en]

We report on the evolution of anisotropic electrical resistivity versus temperature of titanium thin films. An oriented titanium film (1 mu m thick) is sputter deposited by GLancing Angle Deposition (GLAD) using an incident angle alpha=80 degrees of the particle flux. Two parallel Ti electrodes cover this GLAD film. We measure the components of the conductivity tensor by the van der Pauw method during an annealing treatment in air ranging from 298 to 873 K. The average DC electrical resistivity rho changes from 6.03 x 10(-6) to more than 2.40 x 10(-1) Omega m with the increasing temperature. The anisotropy ratio is A=1.39 before annealing and reaches 12.4 for the highest temperatures. This enhanced anisotropy is interpreted assuming the oxidation of the porous GLAD titanium film. 

Place, publisher, year, edition, pages
2013. Vol. 105, 20-23 p.
Keyword [en]
GLAD, Titanium, Resistivity, Anisotropy, Annealing
National Category
Natural Sciences Engineering and Technology
Research subject
Engineering Science with specialization in Electronics
Identifiers
URN: urn:nbn:se:uu:diva-204823DOI: 10.1016/j.matlet.2013.04.058ISI: 000321081200006OAI: oai:DiVA.org:uu-204823DiVA: diva2:640361
Available from: 2013-08-13 Created: 2013-08-12 Last updated: 2017-12-06Bibliographically approved

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Martin, NicolasNyberg, Tomas

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