Growth of SiC by PVT method in the presence of cerium dopant
2013 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 377, 88-95 p.Article in journal (Refereed) Published
The effect of the presence of CeO2 in the source material on the properties of SiC crystals grown by Physical Vapor Transport (PVT) method is investigated. The doping efficiency and, indirectly, the presence of the cerium vapour in the growth atmosphere were examined by study of structural, electrical and optical properties of the crystals. X-ray photoelectron spectroscopy shows that Ce2O3 and CeO2 coexist on the SiC post-growth surfaces. A detectable Ce incorporation is observed only in the last grown part of the crystal.
Place, publisher, year, edition, pages
2013. Vol. 377, 88-95 p.
Cerium dopant, Characterization, Doping, Growth from vapor, Semiconducting materials, SiC
IdentifiersURN: urn:nbn:se:uu:diva-204821DOI: 10.1016/j.jcrysgro.2013.05.011ISI: 000321439700016OAI: oai:DiVA.org:uu-204821DiVA: diva2:640365