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Micromachined One-Port Aluminum Nitride Lamb Wave Resonators Utilizing the Lowest-Order Symmetric Mode
Berkeley Sensor and Actuator Center (BSAC), University of California, Berkeley, CA 94709, USA.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
3Department of Mechanical Engineering, Tatung University, Taipei 10452, TAIWAN.
Univ Calif Berkeley, Berkeley Sensor & Actuator Ctr, Berkeley, CA 94720 USA; Univ Calif Berkeley, Dept Mech Engn, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA.
2013 (English)In: Journal of microelectromechanical systems, ISSN 1057-7157, E-ISSN 1941-0158, Vol. 23, no 1, 78-91 p.Article in journal (Refereed) Published
Abstract [en]

The characteristics of one-port aluminum nitride (AlN) Lamb wave resonators utilizing the lowest symmetric (S0) mode with electrically open, grounded, and floating bottom electrode configurations are theoretically and experimentally investigated. The finite element analysis (FEA) is performed to take an insight into the static capacitance characteristics of the AlN Lamb wave resonators with various bottom surface conditions. The theoretical results predict that the floating bottom electrode efficiently reduces the static capacitance in the AlN thin plate and then promotes an efficient improvement in the effective coupling coefficient. Experimentally the AlN Lamb wave resonator without a bottom electrode exhibits a loaded quality factor (Q) as high as 3033 at its series resonance frequency, 948.1 MHz, but a low effective coupling coefficient of 0.18%. On the contrary, the Lamb wave resonator with an electrically floating bottom electrode shows an effective coupling coefficient up to 1.05% but a low loaded Q of 850 at its series resonance frequency, 850.3 MHz. In contrast to the floating bottom electrode, the Lamb wave resonator with an electrically grounded bottom electrode shows a smaller effective coupling coefficient of 0.78% and a similar loaded Q of 800 at the series resonance frequency, 850.5 MHz.

Place, publisher, year, edition, pages
2013. Vol. 23, no 1, 78-91 p.
Keyword [en]
Thin Film, Resonator, MEMS, Performance
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Engineering Science with specialization in Microwave Technology; Engineering Science with specialization in Electronics
Identifiers
URN: urn:nbn:se:uu:diva-206636DOI: 10.1109/JMEMS.2013.2290793ISI: 000331296200010OAI: oai:DiVA.org:uu-206636DiVA: diva2:644806
Projects
VR funded " "Thin Film Guided Microacoustic Waves in Periodical Systems: Theory and Applications ""
Funder
Swedish Research Council, 2009-5056
Available from: 2013-09-02 Created: 2013-09-02 Last updated: 2017-12-06Bibliographically approved

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Yantchev, Ventsislav

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