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Neutron irradiation of 4H SiC
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2001 (English)In: SILICON CARBIDE AND RELATED MATERIALS, ISSN 0255-5476, Vol. 353, 555-558 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
2001. Vol. 353, 555-558 p.
Keyword [en]
donors; intrinsic defects; isoelectronic defects; neutron irradiation; neutron transmutation doping; phosphorus; photoluminescence
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URN: urn:nbn:se:uu:diva-36682OAI: oai:DiVA.org:uu-36682DiVA: diva2:64581
Available from: 2008-03-17 Created: 2008-03-17 Last updated: 2011-01-13

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Sköld, K

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