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Large-scale atomistic modeling of nanoelectronic structures
Uppsala University, Interfaculty Units, För teknisk-naturvetenskapliga fakulteten gemensamma enheter, The Studsvik Neutron Research Laboratory.
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2000 (English)In: IEEE TRANSACTIONS ON ELECTRON DEVICES, ISSN 0018-9383, Vol. 47, no 10, 1804-1810 p.Article in journal (Refereed) Published
Abstract [en]

Large-scale molecular-dynamics simulations are performed on parallel computers to study critical issues on ultrathin dielectric films and device reliability in nest decade semiconductor devices, New interatomic-potential models based on many-body, reactiv

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC , 2000. Vol. 47, no 10, 1804-1810 p.
Keyword [en]
dielectric films; nanotechnology; parallel algorithms; semiconductor defects; stress; MOLECULAR-DYNAMICS SIMULATIONS; ELECTRONIC-STRUCTURE; MECHANICAL-BEHAVIOR; PARALLEL COMPUTERS; SILICON-NITRIDE; FILMS; MORPHOLOGY; INTERFACES; POTENTIALS; GAAS
Identifiers
URN: urn:nbn:se:uu:diva-36711OAI: oai:DiVA.org:uu-36711DiVA: diva2:64610
Note
Addresses: Nakano A, Louisiana State Univ, Dept Phys & Astron, Dept Comp Sci, Concurrent Comp Lab Mat Simulat, Baton Rouge, LA 70803 USA. Louisiana State Univ, Dept Phys & Astron, Dept Comp Sci, Concurrent Comp Lab Mat Simulat, Baton Rouge, LA 70803 USA.Available from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-14

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