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Stress domains in Si(111)/a-Si3N4 nanopixel: Ten-million-atom molecular dynamics simulations on parallel computers
Uppsala University, Interfaculty Units, För teknisk-naturvetenskapliga fakulteten gemensamma enheter, The Studsvik Neutron Research Laboratory.
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2000 (English)In: PHYSICAL REVIEW LETTERS, ISSN 0031-9007, Vol. 84, no 2, 318-321 p.Article in journal (Refereed) Published
Abstract [en]

Parallel molecular dynamics simulations are performed to determine atomic-level stresses in Si(111)/Si3N4(0001) and Si(111)/a-Si3N4 nanopixels. Compared to the crystalline case, the stresses in amorphous Si3N4 are highly inhomogeneous in the plane of the

Place, publisher, year, edition, pages
AMERICAN PHYSICAL SOC , 2000. Vol. 84, no 2, 318-321 p.
Keyword [en]
SILICON-NITRIDE; ELECTRONIC-STRUCTURE; BETA-SI3N4; MORPHOLOGY; INTERFACE; BETA-C3N4; STRAIN; FILMS
Identifiers
URN: urn:nbn:se:uu:diva-36713OAI: oai:DiVA.org:uu-36713DiVA: diva2:64612
Note
Addresses: Omeltchenko A, Louisiana State Univ, Dept Phys & Astron, Concurrent Comp Lab Mat Simulat, Baton Rouge, LA 70803 USA. Louisiana State Univ, Dept Phys & Astron, Concurrent Comp Lab Mat Simulat, Baton Rouge, LA 70803 USA. Louisiana State Univ, DepAvailable from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-14

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