uu.seUppsala University Publications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Effects of Back Contact Instability on Cu2ZnSnS4 Devices and Processes
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Show others and affiliations
2013 (English)In: Chemistry of Materials, ISSN 0897-4756, E-ISSN 1520-5002, Vol. 25, no 15, 3162-3171 p.Article in journal (Refereed) Published
Abstract [en]

Cu2ZnSnS4 (CZTS) is a promising material for thin film solar cells based on sustainable resources. This paper explores some consequences of the chemical instability between CZTS and the standard Mo “back contact” layer used in the solar cell. Chemical passivation of the back contact interface using titanium nitride (TiN) diffusion barriers, combined with variations in the CZTS annealing process, enables us to isolate the effects of back contact chemistry on the electrical properties of the CZTS layer that result from the synthesis, as determined by measurements on completed solar cells. It is found that instability in the back contact is responsible for large current losses in the finished solar cell, which can be distinguished from other losses that arise from instabilities in the surface of the CZTS layer during annealing. The TiN-passivated back contact is an effective barrier to sulfur atoms and therefore prevents reactions between CZTS and Mo. However, it also results in a high series resistance and thus a reduced fill factor in the solar cell. The need for high chalcogen pressure during CZTS annealing can be linked to suppression of the back contact reactions and could potentially be avoided if better inert back contacts were to be developed.

Place, publisher, year, edition, pages
2013. Vol. 25, no 15, 3162-3171 p.
Keyword [en]
CZTS, kesterite, chalcogenide, thin film, solar cell, interface
National Category
Engineering and Technology
Research subject
Engineering Science with specialization in Electronics
Identifiers
URN: urn:nbn:se:uu:diva-207531DOI: 10.1021/cm4015223ISI: 000323193000032OAI: oai:DiVA.org:uu-207531DiVA: diva2:648566
Available from: 2013-09-16 Created: 2013-09-16 Last updated: 2017-12-06Bibliographically approved

Open Access in DiVA

fulltext(1601 kB)616 downloads
File information
File name FULLTEXT02.pdfFile size 1601 kBChecksum SHA-512
b2f809e0722187746087e37f34c2d4d801ae3eea887f335c9d9bc714052aa65e3a19ce18b591b42a970e492644bd77b74e6e92089d58069bcd27a2277928fe0d
Type fulltextMimetype application/pdf

Other links

Publisher's full text

Authority records BETA

Scragg, Jonathan J.Kubart, TomasWätjen, TimoEricson, TovePlatzer-Björkman, Charlotte

Search in DiVA

By author/editor
Scragg, Jonathan J.Kubart, TomasWätjen, TimoEricson, TovePlatzer-Björkman, Charlotte
By organisation
Solid State Electronics
In the same journal
Chemistry of Materials
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
Total: 616 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 870 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf