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Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systems
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Physics, Department of Physics.
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2001 (English)In: JOURNAL OF CRYSTAL GROWTH, ISSN 0022-0248, Vol. 231, no 3, 420-427 p.Article in journal (Refereed) Published
Abstract [en]

The critical impurity concentration N-c of the metal-nonmetal (MNM) transition for the cubic GaN, InN and AIN systems. is calculated using the following two different criteria: vanishing of the donor binding energy and the crossing point between the energ

Place, publisher, year, edition, pages
ELSEVIER SCIENCE BV , 2001. Vol. 231, no 3, 420-427 p.
Keyword [en]
characterization; doping; molecular beam epitaxy; nitrides; SEMICONDUCTORS; SI-P;BI; DEVICES; DONOR; GAAS
Identifiers
URN: urn:nbn:se:uu:diva-37176OAI: oai:DiVA.org:uu-37176DiVA: diva2:65075
Note
Addresses: da Silva AF, Univ Fed Bahia, Inst Fis, Campus Univ Ondina, BR-40210340 Salvador, BA, Brazil. Univ Fed Bahia, Inst Fis, BR-40210340 Salvador, BA, Brazil. Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, SP, Brazil. Linkoping Univ, Dept Phys & MeAvailable from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-14

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