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Electronic structure of ultrathin Ge layers buried in Si(100) - art. no. 115306
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Physics, Department of Physics.
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2001 (English)In: PHYSICAL REVIEW B, ISSN 0163-1829, Vol. 6411, no 11, 5306-+ Language: English p.Article in journal (Refereed) Published
Abstract [en]

Ultrathin Ge wetting layers, buried in Si(100), have been investigated by soft x-ray emission spectroscopy. With the assistance of ab initio density functional theory calculations the electronic structure of the layers could be established. In particular

Place, publisher, year, edition, pages
AMERICAN PHYSICAL SOC , 2001. Vol. 6411, no 11, 5306-+ Language: English p.
Keyword [en]
X-RAY EMISSION; NORM-CONSERVING PSEUDOPOTENTIALS; ISLAND FORMATION; GROUND-STATE; GAAS; SPECTROSCOPY; PHOTOLUMINESCENCE; DIFFRACTION
Identifiers
URN: urn:nbn:se:uu:diva-37250OAI: oai:DiVA.org:uu-37250DiVA: diva2:65149
Note
Addresses: Nilsson PO, Chalmers Univ Technol, Dept Phys, SE-41296 Gothenburg, Sweden. Chalmers Univ Technol, Dept Phys, SE-41296 Gothenburg, Sweden. Univ Trollhattan Uddevalla, Dept Math & Informat, SE-46129 Trollhattan, Sweden. Uppsala Univ, Dept Phys, SAvailable from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-14

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