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Novel Zn-Doped Al2O3 Charge Storage Medium for Light-Erasable In-Ga-Zn-O TFT Memory
Fudan Univeristy.
Fudan University.
Fudan University.
Fudan University.
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2013 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 34, no 8, 1008-1010 p.Article in journal (Refereed) Published
Abstract [en]

A novel Zn-doped Al2O3 (ZAO) layer prepared by atomic layer deposition (ALD) is used as the charge storage medium in an In-Ga-Zn-O thin-film-transistor memory. The gate insulating stack of Al2O3/ZAO/Al2O3 is assembled in a single ALD step, and is found to possess a high electron storage capacity due to very deep defect levels. The memory device shows a threshold voltage shift as large as 6.38 V after a +15V/1 ms programming pulse, and quite good charge retention. Once programmed, the memory can be only light erased. The underlying mechanisms are discussed with the assistance of density functional theory calculations.

Place, publisher, year, edition, pages
2013. Vol. 34, no 8, 1008-1010 p.
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Engineering Science with specialization in Electronics
Identifiers
URN: urn:nbn:se:uu:diva-208251DOI: 10.1109/LED.2013.2266371ISI: 000323911800025OAI: oai:DiVA.org:uu-208251DiVA: diva2:651543
Available from: 2013-09-26 Created: 2013-09-26 Last updated: 2017-12-06Bibliographically approved

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Nyberg, TomasZhang, Shi-Li

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