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First-principle calculations of optical properties of wurtzite AlN and GaN
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Physics, Department of Physics.
2001 (English)In: JOURNAL OF CRYSTAL GROWTH, ISSN 0022-0248, Vol. 231, no 3, 407-414 Language: English p.Article in journal (Refereed) Published
Abstract [en]

The imaginary part of the dielectric function of wurtzite AIN and GaN has been calculated in the long wavelength limit, using two different first-principle electronic structure methods. The first method is a full-potential linearized augmented plane wave

Place, publisher, year, edition, pages
ELSEVIER SCIENCE BV , 2001. Vol. 231, no 3, 407-414 Language: English p.
Keyword [en]
computer simulation; crystal structure; nitrides; semiconducting III-V materials; DIELECTRIC FUNCTION; STRUCTURAL-PROPERTIES; BAND-STRUCTURE; NITRIDES; VALENCE; FILMS
URN: urn:nbn:se:uu:diva-37267OAI: oai:DiVA.org:uu-37267DiVA: diva2:65166
Addresses: Persson C, Univ Uppsala, Dept Phys, Box 530, SE-75121 Uppsala, Sweden. Univ Uppsala, Dept Phys, SE-75121 Uppsala, Sweden. Univ Fed Bahia, Inst Fis, BR-40210340 Salvador, BA, Brazil.Available from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-14

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