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Effective electronic masses in wurtzite and zinc-blende GaN and AlN
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Physics, Department of Physics.
2001 (English)In: JOURNAL OF CRYSTAL GROWTH, ISSN 0022-0248, Vol. 231, no 3, 397-406 Language: English p.Article in journal (Refereed) Published
Abstract [en]

The effective electron and hole masses are fundamental quantities of semiconductors, used in numerous analyses of experiments and theoretical investigations. We present calculations of the band structure near the band edges in intrinsic GaN and AIN, both

Place, publisher, year, edition, pages
ELSEVIER SCIENCE BV , 2001. Vol. 231, no 3, 397-406 Language: English p.
Keyword [en]
computer simulation; crystal structure; nitrides; semiconducting III-V materials; GENERALIZED GRADIENT APPROXIMATION; LOCAL-DENSITY APPROXIMATION; OPTICAL BAND-GAP; GALLIUM NITRIDE; EPITAXIAL-GROWTH; HEXAGONAL GAN; 001 SILICON; THIN-FILMS; ENERGY; AIN
Identifiers
URN: urn:nbn:se:uu:diva-37269OAI: oai:DiVA.org:uu-37269DiVA: diva2:65168
Note
Addresses: Persson C, Univ Uppsala, Dept Phys, Box 530, SE-75121 Uppsala, Sweden. Univ Uppsala, Dept Phys, SE-75121 Uppsala, Sweden. Univ Fed Bahia, Inst Fis, BR-40210340 Salvador, BA, Brazil.Available from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-14

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