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Metal-nonmetal transition in p-type SiC polytypes - art. no. 205119
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Physics, Department of Physics.
2001 (English)In: PHYSICAL REVIEW B, ISSN 0163-1829, Vol. 6320, no 20, 5119-+ Language: English p.Article in journal (Refereed) Published
Abstract [en]

The critical concentration for the metal-nonmetal transition has been calculated fur the polytypes 3C, 4H, and 6H of SiC, duped with Al, Ga, B, and Sc. Three different computational methods have been utilized: the first is Mott's original model, the secon

Place, publisher, year, edition, pages
AMERICAN PHYSICAL SOC , 2001. Vol. 6320, no 20, 5119-+ Language: English p.
Keyword [en]
TRANSMUTATION-DOPED GE-70-GA; ELECTRICAL-PROPERTIES; INSULATOR-TRANSITION; BAND-STRUCTURE; N-TYPE; SILICON; SEMICONDUCTORS; SHIFTS
Identifiers
URN: urn:nbn:se:uu:diva-37270OAI: oai:DiVA.org:uu-37270DiVA: diva2:65169
Note
Addresses: Persson C, Univ Uppsala, Dept Phys, SE-75121 Uppsala, Sweden. Univ Uppsala, Dept Phys, SE-75121 Uppsala, Sweden. Univ Fed Bahia, Inst Fis, BR-40210340 Salvador, BA, Brazil.Available from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-14

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