Optoelectronic properties of p-i-n heterojunctions based on germanium nanocrystals
2013 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 114, no 3, 033510- p.Article in journal (Refereed) Published
We investigated the possibility of using physical vapour deposited Ge nanocrystals (NCs) in optoelectronic devices such as solar cells. We have prepared p-i-n heterojunctions based on p(+)-doped Si substrate/undoped Ge NCs/ZnO: Al layer stacks and their optoelectronic properties were characterised. Under light, the generation of photo-carriers from the Ge NCs themselves was demonstrated. The photovoltaic behaviour of the p-i-n structure was also highlighted, with a measured Voc of 224 mV compared to 580 mV in theory. The discrepancy between theory and experiment was discussed on the basis of TEM observations, optical and carrier generation measurements as well as modelling.
Place, publisher, year, edition, pages
2013. Vol. 114, no 3, 033510- p.
Natural Sciences Engineering and Technology
Research subject Engineering Science with specialization in Materials Science
IdentifiersURN: urn:nbn:se:uu:diva-208385DOI: 10.1063/1.4813616ISI: 000322202700025OAI: oai:DiVA.org:uu-208385DiVA: diva2:652194