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Annealing behaviour of foreign atom incorporated Co-silicides formed by MEVVA implantation into SiO2/Si and Si3N4/Si structures
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. IONPHYSICS.
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2001 (English)In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, ISSN 0168-583X, Vol. 175, 737-743 p.Article in journal (Refereed) Published
Abstract [en]

Si3N4/Si(1 0 0),SiO2/Si(1 0 0) and SiO2/Si(1 1 1) wafers were implanted by keV Co ions under technical conditions to form thin silicide surface films. A metal vapour vacuum are (MEVVA) source was employed to produce a high fluence of Co ions that was just

Place, publisher, year, edition, pages
ELSEVIER SCIENCE BV , 2001. Vol. 175, 737-743 p.
Keyword [en]
co-silicides; MEVVA ion source; synthesis; ToF-E ERDA; low resistivity; RECOIL SPECTROMETRY; ION-SOURCE; SI; EFFICIENCY; MASS
Identifiers
URN: urn:nbn:se:uu:diva-37327OAI: oai:DiVA.org:uu-37327DiVA: diva2:65226
Note
Addresses: Zhang YW, Beijing Normal Univ, Inst Low Energy Nucl Phys, Key Lab Univ Radiat Beam Technol & Mat Midificat, Beijing 100875, Peoples R China. Beijing Normal Univ, Inst Low Energy Nucl Phys, Key Lab Univ Radiat Beam Technol & Mat Midificat, BeijiAvailable from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-14

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