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Sputtering transients for some transition elements during high-fluence MEVVA implantation of Si
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. IONPHYSICS.
2001 (English)In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, ISSN 0168-583X, Vol. 173, no 4, 427-435 p.Article in journal (Refereed) Published
Abstract [en]

The approach to quasi equilibrium sputtering of transition elements Co, Er. V and Ni during high-fluence implantation of Si(1 1 1) using a metal vapour vacuum are (MEVVA) source has been studied by time of flight-energy elastic recoil detection analysis (

Place, publisher, year, edition, pages
ELSEVIER SCIENCE BV , 2001. Vol. 173, no 4, 427-435 p.
Keyword [en]
sputtering transients; transition elements; silicide; MEVVA; ToF-E ERDA; RECOIL SPECTROMETRY; CO IMPLANTATION; ION-SOURCE; MULTICOMPONENT MATERIALS; SURFACE MODIFICATION; SIO2/SI; EFFICIENCY; FILMS; MASS
Identifiers
URN: urn:nbn:se:uu:diva-37328OAI: oai:DiVA.org:uu-37328DiVA: diva2:65227
Note
Addresses: Zhang YW, Beijing Normal Univ, Inst Low Energy Nucl Phys, Key Lab Univ Radiat Beam Technol & Mat Modificat, Beijing 100875, Peoples R China. Beijing Normal Univ, Inst Low Energy Nucl Phys, Key Lab Univ Radiat Beam Technol & Mat Modificat, BeijiAvailable from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-14

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