Unique UV-Erasable In-Ga-Zn-O TFT Memory With Self-Assembled Pt Nanocrystals
2013 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 34, no 8, 1011-1013 p.Article in journal (Refereed) Published
Semiconducting amorphous indium-gallium-zinc oxide (a-IGZO) films are integrated with an Al2O3/Pt-nanocrystals/ Al2O3 gate-stack to form UV-erasable thin-film transistor (TFT) memory. The threshold voltage (V-th), sub-threshold swing, I-ON/I-OFF ratio, and effective electron mobility of the fabricated devices are 2.1 V, 0.39 V/decade, similar to 10(6), and 8.4 cm(2)/V.s, respectively. A positive V-th shift of 2.25 V is achieved after 1-ms programming at 10 V-th, whereas a negative V-th shift as large as 3.48 V is attained after 5-s UV erasing. In addition, a 10-year memory window of 2.56 V is extrapolated at room temperature. This high-performance a-IGZO TFT memory is suitable for optical touch-panel applications.
Place, publisher, year, edition, pages
2013. Vol. 34, no 8, 1011-1013 p.
In-Ga-Zn-O, nonvolatile memory, Pt nanocrystals (NCs), thin-film transistor (TFT), ultraviolet (UV)
Engineering and Technology
Research subject Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-208373DOI: 10.1109/LED.2013.2268151ISI: 000323911800026OAI: oai:DiVA.org:uu-208373DiVA: diva2:652317