uu.seUppsala University Publications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Unique UV-Erasable In-Ga-Zn-O TFT Memory With Self-Assembled Pt Nanocrystals
Show others and affiliations
2013 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 34, no 8, 1011-1013 p.Article in journal (Refereed) Published
Abstract [en]

Semiconducting amorphous indium-gallium-zinc oxide (a-IGZO) films are integrated with an Al2O3/Pt-nanocrystals/ Al2O3 gate-stack to form UV-erasable thin-film transistor (TFT) memory. The threshold voltage (V-th), sub-threshold swing, I-ON/I-OFF ratio, and effective electron mobility of the fabricated devices are 2.1 V, 0.39 V/decade, similar to 10(6), and 8.4 cm(2)/V.s, respectively. A positive V-th shift of 2.25 V is achieved after 1-ms programming at 10 V-th, whereas a negative V-th shift as large as 3.48 V is attained after 5-s UV erasing. In addition, a 10-year memory window of 2.56 V is extrapolated at room temperature. This high-performance a-IGZO TFT memory is suitable for optical touch-panel applications.

Place, publisher, year, edition, pages
2013. Vol. 34, no 8, 1011-1013 p.
Keyword [en]
In-Ga-Zn-O, nonvolatile memory, Pt nanocrystals (NCs), thin-film transistor (TFT), ultraviolet (UV)
National Category
Engineering and Technology
Research subject
Engineering Science with specialization in Electronics
Identifiers
URN: urn:nbn:se:uu:diva-208373DOI: 10.1109/LED.2013.2268151ISI: 000323911800026OAI: oai:DiVA.org:uu-208373DiVA: diva2:652317
Available from: 2013-09-30 Created: 2013-09-30 Last updated: 2017-12-06Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Nyberg, TomasZhang, Shi-Li

Search in DiVA

By author/editor
Nyberg, TomasZhang, Shi-Li
By organisation
Solid State Electronics
In the same journal
IEEE Electron Device Letters
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 818 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf