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Unique UV-Erasable In-Ga-Zn-O TFT Memory With Self-Assembled Pt Nanocrystals
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2013 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 34, no 8, 1011-1013 p.Article in journal (Refereed) Published
Abstract [en]

Semiconducting amorphous indium-gallium-zinc oxide (a-IGZO) films are integrated with an Al2O3/Pt-nanocrystals/ Al2O3 gate-stack to form UV-erasable thin-film transistor (TFT) memory. The threshold voltage (V-th), sub-threshold swing, I-ON/I-OFF ratio, and effective electron mobility of the fabricated devices are 2.1 V, 0.39 V/decade, similar to 10(6), and 8.4 cm(2)/V.s, respectively. A positive V-th shift of 2.25 V is achieved after 1-ms programming at 10 V-th, whereas a negative V-th shift as large as 3.48 V is attained after 5-s UV erasing. In addition, a 10-year memory window of 2.56 V is extrapolated at room temperature. This high-performance a-IGZO TFT memory is suitable for optical touch-panel applications.

Place, publisher, year, edition, pages
2013. Vol. 34, no 8, 1011-1013 p.
Keyword [en]
In-Ga-Zn-O, nonvolatile memory, Pt nanocrystals (NCs), thin-film transistor (TFT), ultraviolet (UV)
National Category
Engineering and Technology
Research subject
Engineering Science with specialization in Electronics
URN: urn:nbn:se:uu:diva-208373DOI: 10.1109/LED.2013.2268151ISI: 000323911800026OAI: oai:DiVA.org:uu-208373DiVA: diva2:652317
Available from: 2013-09-30 Created: 2013-09-30 Last updated: 2014-02-03Bibliographically approved

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Nyberg, TomasZhang, Shi-Li
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