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Recent advances in the performance of InP Gunn devices and GaAs TUNNETT diodes for the 100-300-GHz frequency range and above
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. SIGNALS AND SYSTEMS.
2000 (English)In: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, ISSN 0018-9480, Vol. 48, no 4, 626-631 p.Article in journal (Refereed) Published
Abstract [en]

Improved heat dissipation in InP Gunn devices resulted in RF power levels exceeding 200, 130, 80, and 25 mW at oscillation frequencies of around 103, 132, 152, and 162 GHz, respectively. Corresponding dc-to-RF conversion efficiencies exceeded 2.3% from 10

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC , 2000. Vol. 48, no 4, 626-631 p.
Keyword [en]
Gunn devices; IMPATT diodes; millimeter-wave devices; millimeter-wave generation; millimeter-wave oscillators; oscillator noise; phase noise; submillimeter-wave devices; submillimeter-wave generation; submillimeter-wave oscillators; transit-time diodes; 2
Identifiers
URN: urn:nbn:se:uu:diva-37402OAI: oai:DiVA.org:uu-37402DiVA: diva2:65301
Note
Addresses: Eisele H, Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA. Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA. Univ Uppsala, Dept Mat Sci, Signal & Syst Grp, S-751Available from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-14

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