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On the degradation of InGaAsP/InP-based bulk lasers
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. MATERIALS SCIENCE/ELECTRONIC MATERIALS.
1999 (English)In: JOURNAL OF LIGHTWAVE TECHNOLOGY, ISSN 0733-8724, Vol. 17, no 12, p. 2584-2594Article in journal (Refereed) Published
Abstract [en]

Degradation of InGaAsP/InP-based buried-heterostructure bulk (BH-bulk) lasers has been studied by means of electroluminescence (EL), photoluminescence (PL), electron-beam-induced current (EBIC) and transmission electron microscopy (TEM). Lasers with p/n a

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC , 1999. Vol. 17, no 12, p. 2584-2594
Keywords [en]
degradation; dislocation; electroluminescence (EL); electron beam-induced current (EBIC); InP; laser; photoluminescence (PL); transmission electron microscopy (TEM); LASING THRESHOLD CURRENT; HETEROSTRUCTURE LASERS; DIODES; ZN
Identifiers
URN: urn:nbn:se:uu:diva-37424OAI: oai:DiVA.org:uu-37424DiVA, id: diva2:65323
Note
Addresses: Kallstenius T, Uppsala Univ, Div Mat Sci, S-75221 Uppsala, Sweden. Uppsala Univ, Div Mat Sci, S-75221 Uppsala, Sweden. Ericsson Components AB, Microelect Div, S-16481 Stockholm, Sweden.Available from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-14

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