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Gigantic resistivity and band gap changes in GdOyHx thin films
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science.
2000 (English)In: APPLIED PHYSICS LETTERS, ISSN 0003-6951, Vol. 76, no 15, 2056-2058 p.Article in journal (Refereed) Published
Abstract [en]

In this letter we show that GdOyHx thin films allow one to tailor the electric and the optical properties by controlling the hydrogen and oxygen content. By changing the O/H ratio, one can shift the optical band gap from 2.4 eV in the trihydride to 5.4 eV

Place, publisher, year, edition, pages
AMER INST PHYSICS , 2000. Vol. 76, no 15, 2056-2058 p.
Identifiers
URN: urn:nbn:se:uu:diva-37444OAI: oai:DiVA.org:uu-37444DiVA: diva2:65343
Note
Addresses: Miniotas A, Royal Inst Technol, Dept Phys, S-10044 Stockholm, Sweden. Royal Inst Technol, Dept Phys, S-10044 Stockholm, Sweden. Univ Uppsala, Angstrom Lab, Dept Mat Sci, S-75121 Uppsala, Sweden.Available from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-14

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