uu.seUppsala University Publications
Change search
ReferencesLink to record
Permanent link

Direct link
III-V semiconductor material for tunable Fabry-Perot filters for coarse and dense WDM systems
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. MATERIALS SCIENCE/MST.
Show others and affiliations
2000 (English)In: SENSORS AND ACTUATORS A-PHYSICAL, ISSN 0924-4247, Vol. 85, no 1-3, 249-255 p.Article in journal (Refereed) Published
Abstract [en]

In the following payer, we report on the investigation of the mechanical properties of InP grown on InGaAs by organic metal vapor phase epitaxy (OMVPE). When InP is grown, it is stressed due to an unintentional arsenic doping profile. This stress gradient

Place, publisher, year, edition, pages
ELSEVIER SCIENCE SA , 2000. Vol. 85, no 1-3, 249-255 p.
Keyword [en]
Inp; MOEMS; tunable Fabry-Perot filter; air gap cavity
URN: urn:nbn:se:uu:diva-37453OAI: oai:DiVA.org:uu-37453DiVA: diva2:65352
Addresses: Strassner M, Royal Inst Technol, Dept Elect, Electrum 229, S-16440 Kista, Sweden. Royal Inst Technol, Dept Elect, S-16440 Kista, Sweden. Univ Uppsala, Dept Mat Sci, S-75121 Uppsala, Sweden.Available from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-14

Open Access in DiVA

No full text

By organisation
Department of Materials Science

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Total: 154 hits
ReferencesLink to record
Permanent link

Direct link