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III-V semiconductor material for tunable Fabry-Perot filters for coarse and dense WDM systems
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. MATERIALS SCIENCE/MST.
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2000 (English)In: SENSORS AND ACTUATORS A-PHYSICAL, ISSN 0924-4247, Vol. 85, no 1-3, 249-255 p.Article in journal (Refereed) Published
Abstract [en]

In the following payer, we report on the investigation of the mechanical properties of InP grown on InGaAs by organic metal vapor phase epitaxy (OMVPE). When InP is grown, it is stressed due to an unintentional arsenic doping profile. This stress gradient

Place, publisher, year, edition, pages
ELSEVIER SCIENCE SA , 2000. Vol. 85, no 1-3, 249-255 p.
Keyword [en]
Inp; MOEMS; tunable Fabry-Perot filter; air gap cavity
Identifiers
URN: urn:nbn:se:uu:diva-37453OAI: oai:DiVA.org:uu-37453DiVA: diva2:65352
Note
Addresses: Strassner M, Royal Inst Technol, Dept Elect, Electrum 229, S-16440 Kista, Sweden. Royal Inst Technol, Dept Elect, S-16440 Kista, Sweden. Univ Uppsala, Dept Mat Sci, S-75121 Uppsala, Sweden.Available from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-14

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