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Electrical properties of the TiSi2-Si transition region in contacts: The influence of an interposed layer of Nb
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. MATERIALS SCIENCE/MST.
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2001 (English)In: JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, Vol. 90, no 5, 2380-2388 p.Article in journal (Refereed) Published
Abstract [en]

The influence of an interposed ultrathin Nb layer between Ti and Si on the silicide formation and the electrical contact between the silicide formed and the Si substrate is investigated. The presence of the Nb interlayer results in the formation of ternar

Place, publisher, year, edition, pages
AMER INST PHYSICS , 2001. Vol. 90, no 5, 2380-2388 p.
Keyword [en]
C54 PHASE; ENHANCED FORMATION; SILICON; TRANSFORMATION; TEMPERATURE; RESISTIVITY; FILMS; ACTIVATION; MOLYBDENUM; RESISTANCE
Identifiers
URN: urn:nbn:se:uu:diva-37463OAI: oai:DiVA.org:uu-37463DiVA: diva2:65362
Note
Addresses: Aberg J, Kungliga Tekn Hgsk, Electrum 229, Dept Microelect & Informat Technol, SE-16440 Kista, Sweden. Kungliga Tekn Hgsk, Electrum 229, Dept Microelect & Informat Technol, SE-16440 Kista, Sweden. Ericsson Microelect AB, Dept Mat Sci, SE-16481Available from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-14

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