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Role of nonradiative recombination in the degradation of InGaAsP/InP-based bulk lasers
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. MATERIALS SCIENCE/ELECTRONIC MATERIALS.
2000 (English)In: IEEE JOURNAL OF QUANTUM ELECTRONICS, ISSN 0018-9197, Vol. 36, no 11, 1312-1322 p.Article in journal (Refereed) Published
Abstract [en]

The role of nonradiative recombination in the degradation of InGaAsP/InP buried-heterostructure bulk lasers with semi-insulating current-blocking has been investigated by current-voltage (I-V), output power response (I-P), and differential carrier lifetim

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC , 2000. Vol. 36, no 11, 1312-1322 p.
Keyword [en]
aging; charge carrier lifetime; indium compounds; laser reliability; semiconductor defects; semiconductor heterojunctions; semiconductor lasers; zinc; INP; DISLOCATIONS; CURRENTS; ZN
Identifiers
URN: urn:nbn:se:uu:diva-37486OAI: oai:DiVA.org:uu-37486DiVA: diva2:65385
Note
Addresses: Kallstenius T, Univ Uppsala, Div Mat Sci, S-75221 Uppsala, Sweden. Univ Uppsala, Div Mat Sci, S-75221 Uppsala, Sweden. Ericsson Microelect AB, S-16481 Stockholm, Sweden.Available from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-14

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