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Properties of GaMnAs layers grown by migration enhanced epitaxy at very low substrate temperatures
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. SOLID STATE PHYSICS.
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2001 (English)In: PHYSICA E, ISSN 1386-9477, Vol. 10, no 1-3, 181-185 p.Article in journal (Refereed) Published
Abstract [en]

We report on the successful growth of GaMnAs layers by means of migration enhanced epitaxy (MEE) at very low substrate temperatures (below 150 degreesC). The MEE growth proceeds under stoichiometric conditions. This should lead to a lower concentration of

Place, publisher, year, edition, pages
ELSEVIER SCIENCE BV , 2001. Vol. 10, no 1-3, 181-185 p.
Keyword [en]
ferromagnetic semiconductors; migration enhanced epitaxy; molecular beam epitaxy; DILUTED MAGNETIC SEMICONDUCTORS; MOLECULAR-BEAM EPITAXY; FERROMAGNETISM; (GA;MN)AS; GAAS
Identifiers
URN: urn:nbn:se:uu:diva-37514OAI: oai:DiVA.org:uu-37514DiVA: diva2:65413
Note
Addresses: Sadowski J, Univ Lund, Max Lab, POB 118, SE-22100 Lund, Sweden. Univ Lund, Max Lab, SE-22100 Lund, Sweden. Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland. Uppsala Univ, Dept Mat Sci, SE-75121 Uppsala, Sweden. Chalmers Univ Technol, Dept ExAvailable from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-14

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