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Electrical characterization of TiC ohmic contacts to aluminum ion implanted 4H-silicon carbide
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Chemistry. Department of Materials Chemistry, Inorganic Chemistry.
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2000 (English)In: APPLIED PHYSICS LETTERS, ISSN 0003-6951, Vol. 77, no 10, 1478-1480 p.Article in journal (Refereed) Published
Abstract [en]

We report on the investigation of epitaxial TiC ohmic contacts to Al ion implanted 4H-SiC. TiC ohmic contacts were formed by coevaporation of Ti and C-60 at low temperature (< 500 degrees C). A sacrificial silicon nitride (Si3N4) layer was deposited on th

Place, publisher, year, edition, pages
2000. Vol. 77, no 10, 1478-1480 p.
Keyword [en]
National Category
Inorganic Chemistry
URN: urn:nbn:se:uu:diva-37583OAI: oai:DiVA.org:uu-37583DiVA: diva2:65482
Addresses: Lee SK, Royal Inst Technol, KTH, Dept Elect, Electrum 229, S-16440 Kista, Sweden. Royal Inst Technol, KTH, Dept Elect, S-16440 Kista, Sweden. Uppsala Univ, Angstrom Lab, Dept Inorganic Chem, Box 538, S-75221 Uppsala, Sweden.Available from: 2007-06-28 Created: 2007-06-28 Last updated: 2011-01-14

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