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Low resistivity ohmic titanium carbide contacts to n- and p-type 4H-silicon carbide
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Chemistry. Department of Materials Chemistry, Inorganic Chemistry.
Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
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2000 (English)In: SOLID-STATE ELECTRONICS, ISSN 0038-1101, Vol. 44, no 7, 1179-1186 p.Article in journal (Refereed) Published
Abstract [en]

Low resistivity Ohmic contacts of epitaxial titanium carbide to highly doped n- (1.3 x 10(19) cm(-3)) and p- (>10(20) cm(-3)) type epilayer on 4H-SiC were investigated. The titanium carbide contacts were epitaxially grown using coevaporation with an e-bea

Place, publisher, year, edition, pages
2000. Vol. 44, no 7, 1179-1186 p.
Keyword [en]
Ohmic contacts; contact resistivity; epitaxial titanium carbide; 4H-SiC; SILICON-CARBIDE; THIN-FILMS; DEVICES; C-60
National Category
Inorganic Chemistry
Identifiers
URN: urn:nbn:se:uu:diva-37584OAI: oai:DiVA.org:uu-37584DiVA: diva2:65483
Note
Addresses: Lee SK, Royal Inst Technol, KTH, Dept Elect, Electrum 229, S-16440 Kista, Sweden. Royal Inst Technol, KTH, Dept Elect, S-16440 Kista, Sweden. Univ Uppsala, Dept Organ Chem, Angstrom Lab, S-75121 Uppsala, Sweden.Available from: 2007-06-28 Created: 2007-06-28 Last updated: 2011-01-14

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