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Halide CVD of dielectric and ferroelectric oxides
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
2001 (English)In: JOURNAL DE PHYSIQUE IV, ISSN 1155-4339, Vol. 11, no PR3, 223-230 p.Article in journal (Refereed) Published
Abstract [en]

Thin films of dielectric and ferroelectric oxide films can be expected to play an increasingly important role in many future applications. Potential applications include areas such as the communication sector, radar, IR detectors, memories, integrated opt

Place, publisher, year, edition, pages
2001. Vol. 11, no PR3, 223-230 p.
Keyword [en]
CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; BI4TI3O12; GROWTH; SILICON
National Category
Inorganic Chemistry
Identifiers
URN: urn:nbn:se:uu:diva-37638OAI: oai:DiVA.org:uu-37638DiVA: diva2:65537
Note
Addresses: Harsta A, Univ Uppsala, Angstrom Lab, Dept Chem Mat, Box 538, S-75121 Uppsala, Sweden. Univ Uppsala, Angstrom Lab, Dept Chem Mat, S-75121 Uppsala, Sweden.Available from: 2005-10-19 Created: 2005-10-19 Last updated: 2011-01-14

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