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Incorporation of C into growth steps of diamond (111)
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
2001 (English)In: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, ISSN 0031-8965, Vol. 186, no 2, 319-330 p.Article in journal (Refereed) Published
Abstract [en]

Different surface processes occuring during growth of diamond (111) have theoretically been investigated by using various quantum mechanical methods (including molecular dynamic simulations). A final incorporation of C-containing growth precursors into th

Place, publisher, year, edition, pages
2001. Vol. 186, no 2, 319-330 p.
Keyword [en]
AB-INITIO; VAPOR-DEPOSITION; ADSORPTION; SURFACE; MIGRATION; HYDROGEN; METHYL; PHASE
National Category
Inorganic Chemistry
Identifiers
URN: urn:nbn:se:uu:diva-37651OAI: oai:DiVA.org:uu-37651DiVA: diva2:65550
Note
Addresses: Larsson K, Univ Uppsala, Dept Chem Mat, Angstrom Lab, Uppsala, Sweden. Univ Uppsala, Dept Chem Mat, Angstrom Lab, Uppsala, Sweden.Available from: 2005-10-19 Created: 2005-10-19 Last updated: 2011-01-14

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Larsson, KarinCarlsson, Jan-Otto

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