Surface abstraction reactions at experimental temperatures; A theoretical study of 4H-SiC(0001)
2001 (English)In: SILICON CARBIDE AND RELATED MATERIALS, ISSN 0255-5476, Vol. 353-3, 231-234 p.Article in journal (Refereed) Published
Hydrogen abstraction by gaseous X radicals (X = H, F, CI, Br) from H-terminated 4H-SiC(0001) surfaces, has been investigated theoretically using Car-Parinello-type molecular dynamics. Experimental temperatures of 1873 and 2573 K were applied. For both the
Place, publisher, year, edition, pages
2001. Vol. 353-3, 231-234 p.
abstraction; adsorption; quantum mechanical calculations
IdentifiersURN: urn:nbn:se:uu:diva-37659OAI: oai:DiVA.org:uu-37659DiVA: diva2:65558
Addresses: Univ Uppsala, Angstrom Lab, Dept Inorgan Chem, POB 538, SE-75121 Uppsala, Sweden. Univ Uppsala, Angstrom Lab, Dept Inorgan Chem, SE-75121 Uppsala, Sweden.2005-10-192005-10-192011-01-14