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Dynamics of SiO2 Buried Layer Removal from Si-SiO2-Si and Si-SiO2-SiC Bonded Substrates by Annealing in Ar
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Komponentgruppen, Solid State Device Group)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Applied Materials Sciences.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Komponentgruppen, Solid State Device Group)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Komponentgruppen, Solid State Device Group)
2014 (English)In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 43, no 2, 541-547 p.Article in journal (Refereed) Published
Abstract [en]

Silicon-on-silicon-carbide substrates could be ideal for high-power and radiofrequency silicon devices. Such hybrid wafers, when made by wafer bonding, contain an intermediate silicon dioxide layer with poor thermal characteristics, which can be removed by high-temperature annealing in an inert atmosphere. To understand the dynamics of this process, removal of 2.4-nm-thick SiO2 layers from Si-SiO2-Si and Si-SiO2-SiC substrates has been studied at temperatures ranging from 1100A degrees C to 1200A degrees C. The substrates were analyzed by transmission electron microscopy, electron energy-loss spectroscopy, secondary-ion mass spectroscopy, and ellipsometry, before and after annealing. For oxide thickness less than 2.4 nm, the activation energy for oxide removal was estimated to be 6.4 eV, being larger than the activation energy reported for removal of thicker oxides (4.1 eV). Under the same conditions, the SiO2 layer became discontinuous. In the time domain, three steps could be distinguished: bulk diffusion, bulk diffusion with void formation, and bulk diffusion with disintegration. The void formation, predominant here, has an energetic cost that could explain the larger activation energy. The oxide remaining after prolonged annealing corresponds to one layer of oxygen atoms.

Place, publisher, year, edition, pages
Springer Berlin/Heidelberg, 2014. Vol. 43, no 2, 541-547 p.
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Engineering Science with specialization in Materials Science; Engineering Science with specialization in Electronics
Identifiers
URN: urn:nbn:se:uu:diva-209754DOI: 10.1007/s11664-013-2861-zISI: 000329656700034OAI: oai:DiVA.org:uu-209754DiVA: diva2:659425
Available from: 2013-10-25 Created: 2013-10-25 Last updated: 2017-12-06Bibliographically approved
In thesis
1. Fabrication and Characterization of Si-on-SiC Hybrid Substrates
Open this publication in new window or tab >>Fabrication and Characterization of Si-on-SiC Hybrid Substrates
2013 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

In this thesis, we are making a new approach to fabricate silicon on insulator (SOI). By replacing the buried silicon dioxide and the silicon handling wafer with silicon carbide through hydrophilic wafer bonding, we have achieved silicon on crystalline silicon carbide for the first time and silicon on polycrystalline silicon carbide substrates at 150 mm wafer size. The conditions for the wafer bonding are studied and the surface and bond interface are characterized. Stress free and interfacial defect free hybrid wafer bonding has been achieved.

The thermally unfavourable interfacial oxide that originates from the hydrophilic treatment has been removed through high temperature annealing, denoted as Ox-away. Based on the experimental observations, a model to explain the dynamics of this process has been proposed. Ox-away together with spheroidization are found to be the responsible theories for the behaviour. The activation energy for this process is estimated as 6.4 eV.

Wafer bonding of Si and polycrystalline SiC has been realised by an intermediate layer of amorphous Si. This layer recrystallizes to some extent during heat treatment.

Electronic and thermal testing structures have been fabricated on the 150 mm silicon on polycrystalline silicon carbide hybrid substrate and on the SOI reference substrate. It is shown that our hybrid substrates have similar or improved electrical performance and 2.5 times better thermal conductivity than their SOI counterpart. 2D simulations together with the experimental measurements have been carried out to extract the thermal conductivity of polycrystalline silicon carbide as κpSiC = 2.7 WK-1cm-1.

The realised Si-on-SiC hybrid wafer has been shown to be thermally and electrically superior to conventional SOI and opens up for hybrid integration of silicon and wide band gap material as SiC and GaN.

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2013. 58 p.
Series
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 1093
Keyword
hydrophilic wafer bonding, silicon on silicon carbide, hybrid substrate, oxygen out-diffusion
National Category
Engineering and Technology
Research subject
Engineering Science with specialization in Electronics
Identifiers
urn:nbn:se:uu:diva-221664 (URN)978-91-554-8794-2 (ISBN)
Public defence
2014-05-16, 2001, Ångströmlaboratoriet, Lägerhyddsvägen 1, Uppsala, 09:30 (English)
Opponent
Supervisors
Available from: 2014-04-11 Created: 2014-04-03 Last updated: 2014-07-25

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Li, Ling-GuangRubino, StefanoVallin, ÖrjanOlsson, Jörgen

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