Thermal characterization of polycrystalline SiC
2014 (English)In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 43, no 4, 1150-1153 p.Article in journal (Refereed) Published
A study is made using fabricated thermal resistors in combination with two-dimensional (2D) electrothermal simulations to determine the thermal conductivity of polycrystalline SiC, single-crystalline SiC, and Si. The results show that the poly-SiC substrate has thermal conductivity of κ poly-SiC = 2.7 W K−1 cm−1, which is significantly lower than that of single-crystalline SiC.
Place, publisher, year, edition, pages
2014. Vol. 43, no 4, 1150-1153 p.
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-209759DOI: 10.1007/s11664-014-3032-6ISI: 000334182700046OAI: oai:DiVA.org:uu-209759DiVA: diva2:659434