W-Band RF-MEMS Dicke Switch Networks In A GaAs MMIC Process
2013 (English)In: Microwave and optical technology letters (Print), ISSN 0895-2477, E-ISSN 1098-2760, Vol. 55, no 12, 2849-2853 p.Article in journal (Refereed) Published
A novel design of a W-band RF-microelectro-mechanical-system (RF-MEMS) Dicke switch network realized in a GaAs monolithic microwave integrated circuit process is presented in this article (including a BenzoCycloButene cap type of 0-level package used as protection during wafer dicing). Such fabricated GaAs MEMS Dicke switch circuits show transmission losses of 1.3-1.7 dB (uncapped on-wafer), 1.6-2.0 dB (uncapped chips), and 1.8-2.7 dB (0-level packaged chips) at 70-96 GHz. Corresponding measured maximum values of switch isolation equal 23, 26, and 27 dB, respectively. To the authors' knowledge, these are the first reported uncapped and wafer-level packaged W-band low loss/DC power and high isolation/linearity RF-MEMS Dicke switch circuits made in a GaAs foundry process.
Place, publisher, year, edition, pages
2013. Vol. 55, no 12, 2849-2853 p.
Dicke switch network, Gallium Arsenide, monolithic microwave integrated circuit, radio frequency microelectro-mechanical-systems
Engineering and Technology
Research subject Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-210167DOI: 10.1002/mop.27983ISI: 000325091400010OAI: oai:DiVA.org:uu-210167DiVA: diva2:661667