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Very High Current Gain Enhancement by Substrate Biasing of Lateral Bipolar Transistors on Thin SOI
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Physics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
1993 (English)In: Infos, 1993Conference paper, Poster (with or without abstract) (Refereed)
Place, publisher, year, edition, pages
1993.
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Other Electrical Engineering, Electronic Engineering, Information Engineering
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URN: urn:nbn:se:uu:diva-210689OAI: oai:DiVA.org:uu-210689DiVA: diva2:664078
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Available from: 2013-11-13 Created: 2013-11-13 Last updated: 2013-11-13

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Olsson, Jörgen

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