uu.seUppsala University Publications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Processing and evaluation of metal gate/high-k/Si capacitors incorporating Al, Ni, TiN, and Mo as metal gate, and ZrO2 and HfO2 as high-k dielectric
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Show others and affiliations
2006 (English)In: Presented at Int. Conf. on Micro- and Nano-Engineering, 2006Conference paper, Oral presentation with published abstract (Other academic)
Place, publisher, year, edition, pages
2006.
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:uu:diva-211204OAI: oai:DiVA.org:uu-211204DiVA: diva2:665878
Conference
Int. Conf. on Micro- and Nano-Engineering, Barcelona, Spain
Available from: 2013-11-21 Created: 2013-11-21 Last updated: 2016-06-23

Open Access in DiVA

No full text

Authority records BETA

Sjöblom, GustafOlsson, Jörgen

Search in DiVA

By author/editor
Sjöblom, GustafOlsson, Jörgen
By organisation
Solid State Electronics
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 860 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf