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Temperature dependent and electrical properties of dominant low-frequency noise source in SiGe HBT
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. SIGNALS AND SYSTEMS.
2000 (English)In: IEEE Transactions on Electronic Devices, Vol. 47, 1107-1112 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
2000. Vol. 47, 1107-1112 p.
URN: urn:nbn:se:uu:diva-39900OAI: oai:DiVA.org:uu-39900DiVA: diva2:67800
Available from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-14

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