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Enhanced diffusion caused by surface reactions in thin films of Sn–Cu–Mn
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Materials Physics.
Kyiv Polytechnic Institute.
Kyiv Polytechnic Institute.
University of Debrecen.
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2014 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 550, 723-731 p.Article in journal (Refereed) Published
Abstract [en]

This paper describes an investigation of low-temperature diffusion in thin films of Sn/Cu, Cu/Mn and Sn/Cu/Mn. The combination of Rutherford backscattering spectroscopy, grazing incidence X-ray diffraction and Auger electron spectroscopy has been used to provide information about the concentration distribution of components and the depth of the various phases and interfaces. The results show that processes that occur on a free surface of thin films can stimulate diffusion of elements in the bulk. It is shown that the element with higher affinity to oxygen tends to move to the surface in order to oxidize and that this oxidation process provides a driving force for further diffusion. Introduction of a third layer to a bilayer system may lead to changes in the surface topography caused by the reactive diffusion between upper layers and it causes the development of fast, ‘short-circuit’ diffusion paths and so increases the diffusion of elements from the bottom to the top. Reactive diffusion between Sn and Cu in the top layers leads to significant changes at the surface with features of the size of 10 to 20 nmappearing. These changes provide shortcuts for the diffusion of Mn atoms from the bottom layer to the free surface. As a consequence of these processes, the sequence of layers of different elements in thin-film structures alters diffusionand results in different sample properties.

Place, publisher, year, edition, pages
2014. Vol. 550, 723-731 p.
Keyword [en]
Oxidation, Diffusion, Topography, Surface
National Category
Condensed Matter Physics
Research subject
URN: urn:nbn:se:uu:diva-213178DOI: 10.1016/j.tsf.2013.10.143ISI: 000328499700114OAI: oai:DiVA.org:uu-213178DiVA: diva2:681047
Swedish Institute 00699/2009
Available from: 2013-12-19 Created: 2013-12-19 Last updated: 2014-01-20Bibliographically approved

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