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Variation of Schottky barrier height induced by dopant segregation monitored by contact resistivity measurements
Institute of Microelectronics of Chinese Academy of Sciences.
Fudan University.
Institute of Microelectronics of Chinese Academy of Sciences.
Institute of Microelectronics of Chinese Academy of Sciences.
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2013 (English)Conference paper, Poster (with or without abstract) (Other academic)
Place, publisher, year, edition, pages
2013.
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Engineering Science with specialization in Electronics
Identifiers
URN: urn:nbn:se:uu:diva-213587OAI: oai:DiVA.org:uu-213587DiVA: diva2:682662
Conference
17th European Workshop on Materials for Advanced Metallization 2013 (MAM’2013), Leuven, Belgium, March 11-13, 2013.
Available from: 2013-12-29 Created: 2013-12-29 Last updated: 2016-04-21

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Luo, JunZhang, Shi-Li

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