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The ambipolar Auger coefficient: Measured temperature dependeble in electron irradiated and highly injected n-type silicon
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
1997 (English)In: J Appl Phys, Vol. 81, no 5, 2256-2262 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
1997. Vol. 81, no 5, 2256-2262 p.
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Other Electrical Engineering, Electronic Engineering, Information Engineering
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URN: urn:nbn:se:uu:diva-40430OAI: oai:DiVA.org:uu-40430DiVA: diva2:68331
Available from: 2007-03-02 Created: 2007-03-02 Last updated: 2011-01-15

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